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The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors.

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Title: The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors.
Authors: Liao, W. C.1, Chen, Y. L.1, Chen, C. H.1, Chyi, J. I.1, Hsin, Y. M.1
Source: Applied Physics Letters; 1/20/2014, Vol. 104 Issue 3, p033503-1-033503-5, 5p, 5 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 94059402
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 1/20/2014, Vol. 104 Issue 3, p033503-1-033503-5, 5p, 5 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=94059402
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        Value: 10.1063/1.4862669
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        Text: English
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              Text: 1/20/2014
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