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Surface photovoltage measurement of light instability of amorphous silicon films.

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Bibliographic Details
Title: Surface photovoltage measurement of light instability of amorphous silicon films.
Authors: Epstein, K. A., Tran, N. T., Jeffrey, F. R., Moore, A. R.
Source: Applied Physics Letters; 7/21/1986, Vol. 49 Issue 3, p173, 3p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 9820363
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Surface photovoltage measurement of light instability of amorphous silicon films.
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  Data: <searchLink fieldCode="AU" term="%22Epstein%2C+K%2E+A%2E%22">Epstein, K. A.</searchLink><br /><searchLink fieldCode="AU" term="%22Tran%2C+N%2E+T%2E%22">Tran, N. T.</searchLink><br /><searchLink fieldCode="AU" term="%22Jeffrey%2C+F%2E+R%2E%22">Jeffrey, F. R.</searchLink><br /><searchLink fieldCode="AU" term="%22Moore%2C+A%2E+R%2E%22">Moore, A. R.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 7/21/1986, Vol. 49 Issue 3, p173, 3p
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      – Type: doi
        Value: 10.1063/1.97215
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 173
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      – TitleFull: Surface photovoltage measurement of light instability of amorphous silicon films.
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            NameFull: Epstein, K. A.
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            NameFull: Tran, N. T.
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            NameFull: Jeffrey, F. R.
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            NameFull: Moore, A. R.
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              Text: 7/21/1986
              Type: published
              Y: 1986
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            – TitleFull: Applied Physics Letters
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