APA (7th ed.) Citation

Burger, W. R., & Reif, R. (1987). Bulk-quality bipolar transistors fabricated in low-temperature (Tdep =800 °C) epitaxial silicon. Applied Physics Letters, 50(20), 1447. https://doi.org/10.1063/1.97850

Chicago Style (17th ed.) Citation

Burger, W. R., and R. Reif. "Bulk-quality Bipolar Transistors Fabricated in Low-temperature (Tdep =800 °C) Epitaxial Silicon." Applied Physics Letters 50, no. 20 (1987): 1447. https://doi.org/10.1063/1.97850.

MLA (9th ed.) Citation

Burger, W. R., and R. Reif. "Bulk-quality Bipolar Transistors Fabricated in Low-temperature (Tdep =800 °C) Epitaxial Silicon." Applied Physics Letters, vol. 50, no. 20, 1987, p. 1447, https://doi.org/10.1063/1.97850.