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Bulk-quality bipolar transistors fabricated in low-temperature (Tdep =800 °C) epitaxial silicon.

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Bibliographic Details
Title:	Bulk-quality bipolar transistors fabricated in low-temperature (Tdep =800 °C) epitaxial silicon.
Authors:	Burger, W. R., Reif, R.
Source:	Applied Physics Letters; 5/18/1987, Vol. 50 Issue 20, p1447, 3p
Database:	Applied Science & Technology Source

Description
ISSN:	00036951
DOI:	10.1063/1.97850