APA (7th ed.) Citation

Tsang, W. T., Schubert, E. F., Chiu, T. H., Cunningham, J. E., Burkhardt, E. G., Ditzenberger, J. A., & Agyekum, E. (1987). Growth of high-quality GaxIn1-xAsyP1-y by chemical beam epitaxy. Applied Physics Letters, 51(10), 761. https://doi.org/10.1063/1.98859

Chicago Style (17th ed.) Citation

Tsang, W. T., E. F. Schubert, T. H. Chiu, J. E. Cunningham, E. G. Burkhardt, J. A. Ditzenberger, and E. Agyekum. "Growth of High-quality GaxIn1-xAsyP1-y by Chemical Beam Epitaxy." Applied Physics Letters 51, no. 10 (1987): 761. https://doi.org/10.1063/1.98859.

MLA (9th ed.) Citation

Tsang, W. T., et al. "Growth of High-quality GaxIn1-xAsyP1-y by Chemical Beam Epitaxy." Applied Physics Letters, vol. 51, no. 10, 1987, p. 761, https://doi.org/10.1063/1.98859.