Growth of high-quality GaxIn1-xAsyP1-y by chemical beam epitaxy.
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| Title: | Growth of high-quality GaxIn1-xAsyP1-y by chemical beam epitaxy. |
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| Authors: | Tsang, W. T., Schubert, E. F., Chiu, T. H., Cunningham, J. E., Burkhardt, E. G., Ditzenberger, J. A., Agyekum, E. |
| Source: | Applied Physics Letters; 9/7/1987, Vol. 51 Issue 10, p761, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.98859 |
