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Growth of high-quality GaxIn1-xAsyP1-y by chemical beam epitaxy.

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Bibliographic Details
Title: Growth of high-quality GaxIn1-xAsyP1-y by chemical beam epitaxy.
Authors: Tsang, W. T., Schubert, E. F., Chiu, T. H., Cunningham, J. E., Burkhardt, E. G., Ditzenberger, J. A., Agyekum, E.
Source: Applied Physics Letters; 9/7/1987, Vol. 51 Issue 10, p761, 3p
Database: Applied Science & Technology Source
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