APA (7th ed.) Citation

Tsang, W. T., Levi, A. F. J., & Burkhardt, E. G. (1988). GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy. Applied Physics Letters, 53(11), 983. https://doi.org/10.1063/1.100048

Chicago Style (17th ed.) Citation

Tsang, W. T., A. F. J. Levi, and E. G. Burkhardt. "GaInAs/GaInAsP/InP Heterostructure Bipolar Transistors with Very Thin Base (150 Å) Grown by Chemical Beam Epitaxy." Applied Physics Letters 53, no. 11 (1988): 983. https://doi.org/10.1063/1.100048.

MLA (9th ed.) Citation

Tsang, W. T., et al. "GaInAs/GaInAsP/InP Heterostructure Bipolar Transistors with Very Thin Base (150 Å) Grown by Chemical Beam Epitaxy." Applied Physics Letters, vol. 53, no. 11, 1988, p. 983, https://doi.org/10.1063/1.100048.