GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy.
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| Title: | GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy. |
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| Authors: | Tsang, W. T., Levi, A. F. J., Burkhardt, E. G. |
| Source: | Applied Physics Letters; 9/12/1988, Vol. 53 Issue 11, p983, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.100048 |
