APA (7th ed.) Citation

Doering, S., Rudolf, R., Pinkert, M., Roetz, H., Wagner, C., Eckl, S., . . . Mikolajick, T. (2014). Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage. Microelectronics Reliability, 54(9/10), 2128. https://doi.org/10.1016/j.microrel.2014.07.021

Chicago Style (17th ed.) Citation

Doering, S., R. Rudolf, M. Pinkert, H. Roetz, C. Wagner, S. Eckl, M. Strasser, A. Wachowiak, and T. Mikolajick. "Scanning Spreading Resistance Microscopy for Failure Analysis of NLDMOS Devices with Decreased Breakdown Voltage." Microelectronics Reliability 54, no. 9/10 (2014): 2128. https://doi.org/10.1016/j.microrel.2014.07.021.

MLA (9th ed.) Citation

Doering, S., et al. "Scanning Spreading Resistance Microscopy for Failure Analysis of NLDMOS Devices with Decreased Breakdown Voltage." Microelectronics Reliability, vol. 54, no. 9/10, 2014, p. 2128, https://doi.org/10.1016/j.microrel.2014.07.021.