APA (7th ed.) Citation

Belov, S., Ostroumova, E., & Rogacheva, E. (2015). Dynamics of induced base layer formation in tunnel MIS-transistors under strong electric fields. Technical Physics Letters, 41(2), 153. https://doi.org/10.1134/S1063785015020030

Chicago Style (17th ed.) Citation

Belov, S., E. Ostroumova, and E. Rogacheva. "Dynamics of Induced Base Layer Formation in Tunnel MIS-transistors Under Strong Electric Fields." Technical Physics Letters 41, no. 2 (2015): 153. https://doi.org/10.1134/S1063785015020030.

MLA (9th ed.) Citation

Belov, S., et al. "Dynamics of Induced Base Layer Formation in Tunnel MIS-transistors Under Strong Electric Fields." Technical Physics Letters, vol. 41, no. 2, 2015, p. 153, https://doi.org/10.1134/S1063785015020030.