APA (7th ed.) Citation

Fan, C., Shang, M., Li, B., Lin, Y., Wang, S., Lee, W., & Hung, B. (2015). Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process. Materials (1996-1944), 8(4), 1704. https://doi.org/10.3390/ma8041704

Chicago Style (17th ed.) Citation

Fan, Ching-Lin, Ming-Chi Shang, Bo-Jyun Li, Yu-Zuo Lin, Shea-Jue Wang, Win-Der Lee, and Bohr-Ran Hung. "Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process." Materials (1996-1944) 8, no. 4 (2015): 1704. https://doi.org/10.3390/ma8041704.

MLA (9th ed.) Citation

Fan, Ching-Lin, et al. "Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process." Materials (1996-1944), vol. 8, no. 4, 2015, p. 1704, https://doi.org/10.3390/ma8041704.