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Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process.

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Title: Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process.
Authors: Ching-Lin Fan1,2 clfan@mail.ntust.edu.tw, Ming-Chi Shang1 d10019004@mail.ntust.edu.tw, Bo-Jyun Li1 m10019004@mail.ntust.edu.tw, Yu-Zuo Lin2 yzlin.ntust@gmail.com, Shea-Jue Wang3 sjwang@ntut.edu.tw, Win-Der Lee4 leewd@mail.lit.edu.tw, Bohr-Ran Hung1 huangbr@mail.ntust.edu.tw
Source: Materials (1996-1944). 2015, Vol. 8 Issue 4, p1704-1713. 10p. 2 Diagrams, 1 Chart, 4 Graphs.
Database: Academic Search Ultimate
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ISSN:19961944
DOI:10.3390/ma8041704