APA (7th ed.) Citation

Kapitonov, Y. V., Shapochkin, P. Y., Petrov, Y. V., Efimov, Y. P., Eliseev, S. A., Dolgikh, Y. K., . . . Ovsyankin, V. V. (2015). Effect of irradiation by He+ and Ga+ ions on the 2D-exciton susceptibility of InGaAs/GaAs quantum-well structures. Physica Status Solidi (B), 252(9), 1950. https://doi.org/10.1002/pssb.201451611

Chicago Style (17th ed.) Citation

Kapitonov, Yu. V., P. Yu Shapochkin, Yu. V. Petrov, Yu. P. Efimov, S. A. Eliseev, Yu. K. Dolgikh, V. V. Petrov, and V. V. Ovsyankin. "Effect of Irradiation by He+ and Ga+ Ions on the 2D-exciton Susceptibility of InGaAs/GaAs Quantum-well Structures." Physica Status Solidi (B) 252, no. 9 (2015): 1950. https://doi.org/10.1002/pssb.201451611.

MLA (9th ed.) Citation

Kapitonov, Yu. V., et al. "Effect of Irradiation by He+ and Ga+ Ions on the 2D-exciton Susceptibility of InGaAs/GaAs Quantum-well Structures." Physica Status Solidi (B), vol. 252, no. 9, 2015, p. 1950, https://doi.org/10.1002/pssb.201451611.