APA (7th ed.) Citation

Inoue, M., Kageshima, H., Kangawa, Y., & Kakimoto, K. (2012). First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001). Physical Review B: Condensed Matter & Materials Physics, 86(8), 1. https://doi.org/10.1103/PhysRevB.86.085417

Chicago Style (17th ed.) Citation

Inoue, Masato, Hiroyuki Kageshima, Yoshihiro Kangawa, and Koichi Kakimoto. "First-principles Calculation of 0th-layer Graphene-like Growth of C on SiC(0001)." Physical Review B: Condensed Matter & Materials Physics 86, no. 8 (2012): 1. https://doi.org/10.1103/PhysRevB.86.085417.

MLA (9th ed.) Citation

Inoue, Masato, et al. "First-principles Calculation of 0th-layer Graphene-like Growth of C on SiC(0001)." Physical Review B: Condensed Matter & Materials Physics, vol. 86, no. 8, 2012, p. 1, https://doi.org/10.1103/PhysRevB.86.085417.