APA (7th ed.) Citation

Prégaldiny, F., Lallement, C., van Langevelde, R., & Mathiot, D. (2004). An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs. Solid-State Electronics, 48(3), 427. https://doi.org/10.1016/j.sse.2003.09.005

Chicago Style (17th ed.) Citation

Prégaldiny, Fabien, Christophe Lallement, Ronald van Langevelde, and Daniel Mathiot. "An Advanced Explicit Surface Potential Model Physically Accounting for the Quantization Effects in Deep-submicron MOSFETs." Solid-State Electronics 48, no. 3 (2004): 427. https://doi.org/10.1016/j.sse.2003.09.005.

MLA (9th ed.) Citation

Prégaldiny, Fabien, et al. "An Advanced Explicit Surface Potential Model Physically Accounting for the Quantization Effects in Deep-submicron MOSFETs." Solid-State Electronics, vol. 48, no. 3, 2004, p. 427, https://doi.org/10.1016/j.sse.2003.09.005.