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An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs

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Title: An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs
Authors: Prégaldiny, Fabien1 fabien.pregaldiny@phase.c-strasbourg.fr, Lallement, Christophe1, van Langevelde, Ronald2, Mathiot, Daniel1
Source: Solid-State Electronics. Mar2004, Vol. 48 Issue 3, p427. 9p.
Database: Academic Search Ultimate
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Header DbId: asn
DbLabel: Academic Search Ultimate
An: 11464646
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>. Mar2004, Vol. 48 Issue 3, p427. 9p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=11464646
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      – Type: doi
        Value: 10.1016/j.sse.2003.09.005
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 427
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      – TitleFull: An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs
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            NameFull: Prégaldiny, Fabien
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            NameFull: Lallement, Christophe
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            NameFull: van Langevelde, Ronald
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              Text: Mar2004
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              Value: 48
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            – TitleFull: Solid-State Electronics
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