Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors.
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| Title: | Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors. |
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| Authors: | Tseng, Alex C.1,2 (AUTHOR) alexc.tseng@mail.utoronto.ca, Lynall, David1,2 (AUTHOR) david.lynall@mail.utoronto.ca, Savelyev, Igor1 (AUTHOR) igor.saveliev@utoronto.ca, Blumin, Marina1 (AUTHOR) marina.blumin@utoronto.ca, Shiliang Wang3 (AUTHOR) shiliang.wang@drdc-rddc.gc.ca, Ruda, Harry E.1,2 (AUTHOR) harry.ruda@utoronto.ca |
| Source: | Sensors (14248220). Jul2017, Vol. 17 Issue 7, p1640. 12p. 1 Chart, 4 Graphs. |
| Database: | Academic Search Ultimate |
| ISSN: | 14248220 |
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| DOI: | 10.3390/s17071640 |
