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Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors.

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Title: Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors.
Authors: Tseng, Alex C.1,2 (AUTHOR) alexc.tseng@mail.utoronto.ca, Lynall, David1,2 (AUTHOR) david.lynall@mail.utoronto.ca, Savelyev, Igor1 (AUTHOR) igor.saveliev@utoronto.ca, Blumin, Marina1 (AUTHOR) marina.blumin@utoronto.ca, Shiliang Wang3 (AUTHOR) shiliang.wang@drdc-rddc.gc.ca, Ruda, Harry E.1,2 (AUTHOR) harry.ruda@utoronto.ca
Source: Sensors (14248220). Jul2017, Vol. 17 Issue 7, p1640. 12p. 1 Chart, 4 Graphs.
Database: Academic Search Ultimate
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  Data: Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors.
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  Data: <searchLink fieldCode="AR" term="%22Tseng%2C+Alex+C%2E%22">Tseng, Alex C.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> alexc.tseng@mail.utoronto.ca</i><br /><searchLink fieldCode="AR" term="%22Lynall%2C+David%22">Lynall, David</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> david.lynall@mail.utoronto.ca</i><br /><searchLink fieldCode="AR" term="%22Savelyev%2C+Igor%22">Savelyev, Igor</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> igor.saveliev@utoronto.ca</i><br /><searchLink fieldCode="AR" term="%22Blumin%2C+Marina%22">Blumin, Marina</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> marina.blumin@utoronto.ca</i><br /><searchLink fieldCode="AR" term="%22Shiliang+Wang%22">Shiliang Wang</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> shiliang.wang@drdc-rddc.gc.ca</i><br /><searchLink fieldCode="AR" term="%22Ruda%2C+Harry+E%2E%22">Ruda, Harry E.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> harry.ruda@utoronto.ca</i>
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  Data: <searchLink fieldCode="JN" term="%22Sensors+%2814248220%29%22">Sensors (14248220)</searchLink>. Jul2017, Vol. 17 Issue 7, p1640. 12p. 1 Chart, 4 Graphs.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=124880021
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        Value: 10.3390/s17071640
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      – TitleFull: Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors.
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              Text: Jul2017
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