APA (7th ed.) Citation

Krempaský, J., Springholz, G., Minár, J., & Dil, J. H. (2018). α-GeTe and (GeMn)Te Semiconductors: A New Paradigm for Spintronics. AIP Conference Proceedings, 1996(1), 1. https://doi.org/10.1063/1.5048878

Chicago Style (17th ed.) Citation

Krempaský, J., G. Springholz, J. Minár, and J. H. Dil. "α-GeTe and (GeMn)Te Semiconductors: A New Paradigm for Spintronics." AIP Conference Proceedings 1996, no. 1 (2018): 1. https://doi.org/10.1063/1.5048878.

MLA (9th ed.) Citation

Krempaský, J., et al. "α-GeTe and (GeMn)Te Semiconductors: A New Paradigm for Spintronics." AIP Conference Proceedings, vol. 1996, no. 1, 2018, p. 1, https://doi.org/10.1063/1.5048878.