α-GeTe and (GeMn)Te Semiconductors: a New Paradigm for Spintronics.
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| Title: | α-GeTe and (GeMn)Te Semiconductors: a New Paradigm for Spintronics. |
|---|---|
| Authors: | Krempaský, J.1 juraj.krempasky@psi.ch, Springholz, G.2, Minár, J.3, Dil, J. H.4 |
| Source: | AIP Conference Proceedings. 2018, Vol. 1996 Issue 1, p1-6. 6p. 4 Graphs. |
| Database: | Academic Search Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: asn DbLabel: Academic Search Ultimate An: 131036967 AccessLevel: 2 PubType: Conference PubTypeId: conference PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=131036967 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/1.5048878 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 1 Titles: – TitleFull: α-GeTe and (GeMn)Te Semiconductors: a New Paradigm for Spintronics. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Krempaský, J. – PersonEntity: Name: NameFull: Springholz, G. – PersonEntity: Name: NameFull: Minár, J. – PersonEntity: Name: NameFull: Dil, J. H. IsPartOfRelationships: – BibEntity: Dates: – D: 08 M: 07 Text: 2018 Type: published Y: 2018 Identifiers: – Type: issn-print Value: 0094243X Numbering: – Type: volume Value: 1996 – Type: issue Value: 1 Titles: – TitleFull: AIP Conference Proceedings Type: main |
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