Liu, K., Tezuka, T., Sugita, S., Watari, Y., Horikoshi, Y., Su, Y., & Chang, S. (2004). High quality GaN epitaxial layers grown by modulated beam growth method. Materials Chemistry & Physics, 86(1), 161. https://doi.org/10.1016/j.matchemphys.2004.02.027
Chicago Style (17th ed.) CitationLiu, K.T, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y.K Su, and S.J Chang. "High Quality GaN Epitaxial Layers Grown by Modulated Beam Growth Method." Materials Chemistry & Physics 86, no. 1 (2004): 161. https://doi.org/10.1016/j.matchemphys.2004.02.027.
MLA (9th ed.) CitationLiu, K.T, et al. "High Quality GaN Epitaxial Layers Grown by Modulated Beam Growth Method." Materials Chemistry & Physics, vol. 86, no. 1, 2004, p. 161, https://doi.org/10.1016/j.matchemphys.2004.02.027.