Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate. - Seredin, P. V.; Goloshchapov, D. L.; Zolotukhin, D. S.; Lenshin, A. S.; Mizerov, A. M.; Arsentyev, I. N.; Leiste, Harald; Rinke, Monika (Semiconductors, 2019)