APA (7th ed.) Citation

Vozda, V., Medvedev, N., Chalupský, J., Čechal, J., Burian, T., Hájková, V., . . . Kunc, J. (2020). Detachment of epitaxial graphene from SiC substrate by XUV laser radiation. Carbon, 161, 36. https://doi.org/10.1016/j.carbon.2020.01.028

Chicago Style (17th ed.) Citation

Vozda, V., N. Medvedev, J. Chalupský, J. Čechal, T. Burian, V. Hájková, L. Juha, M. Krůs, and J. Kunc. "Detachment of Epitaxial Graphene from SiC Substrate by XUV Laser Radiation." Carbon 161 (2020): 36. https://doi.org/10.1016/j.carbon.2020.01.028.

MLA (9th ed.) Citation

Vozda, V., et al. "Detachment of Epitaxial Graphene from SiC Substrate by XUV Laser Radiation." Carbon, vol. 161, 2020, p. 36, https://doi.org/10.1016/j.carbon.2020.01.028.