Ratnikov, V. V., Nechaev, D. V., Myasoedov, A. V., Koshelev, O. A., & Zhmerik, V. N. (2020). Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy. Technical Physics Letters, 46(4), 389. https://doi.org/10.1134/S1063785020040240
Chicago Style (17th ed.) CitationRatnikov, V. V., D. V. Nechaev, A. V. Myasoedov, O. A. Koshelev, and V. N. Zhmerik. "Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy." Technical Physics Letters 46, no. 4 (2020): 389. https://doi.org/10.1134/S1063785020040240.
MLA (9th ed.) CitationRatnikov, V. V., et al. "Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy." Technical Physics Letters, vol. 46, no. 4, 2020, p. 389, https://doi.org/10.1134/S1063785020040240.