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Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy.

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Title: Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy.
Authors: Ratnikov, V. V.1 (AUTHOR) ratnikov@mail.ioffe.ru, Nechaev, D. V.1 (AUTHOR), Myasoedov, A. V.1 (AUTHOR), Koshelev, O. A.1 (AUTHOR), Zhmerik, V. N.1 (AUTHOR)
Source: Technical Physics Letters. Apr2020, Vol. 46 Issue 4, p389-392. 4p.
Database: Academic Search Ultimate
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  Data: Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy.
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  Data: <searchLink fieldCode="JN" term="%22Technical+Physics+Letters%22">Technical Physics Letters</searchLink>. Apr2020, Vol. 46 Issue 4, p389-392. 4p.
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              Text: Apr2020
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