Saylan, S., Aldosari, H. M., Humood, K., Abi Jaoude, M., Ravaux, F., & Mohammad, B. (2020). Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si. Scientific Reports, 10(1), N.PAG. https://doi.org/10.1038/s41598-020-76333-6
Chicago Style (17th ed.) CitationSaylan, Sueda, Haila M. Aldosari, Khaled Humood, Maguy Abi Jaoude, Florent Ravaux, and Baker Mohammad. "Effects of Top Electrode Material in Hafnium-oxide-based Memristive Systems on Highly-doped Si." Scientific Reports 10, no. 1 (2020): N.PAG. https://doi.org/10.1038/s41598-020-76333-6.
MLA (9th ed.) CitationSaylan, Sueda, et al. "Effects of Top Electrode Material in Hafnium-oxide-based Memristive Systems on Highly-doped Si." Scientific Reports, vol. 10, no. 1, 2020, p. N.PAG, https://doi.org/10.1038/s41598-020-76333-6.