Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions.
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| Title: | Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions. |
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| Authors: | Bencherif, H.1 (AUTHOR) hichem.bencherif@univ-batna2.dz, Pezzimenti, F.2 (AUTHOR), Dehimi, L.3,4 (AUTHOR), Della Corte, F. G.2 (AUTHOR) |
| Source: | Applied Physics A: Materials Science & Processing. Nov2020, Vol. 126 Issue 11, p1-5. 5p. |
| Database: | Academic Search Ultimate |
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| ISSN: | 09478396 |
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| DOI: | 10.1007/s00339-020-03850-6 |
