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Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions.

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Title: Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions.
Authors: Bencherif, H.1 (AUTHOR) hichem.bencherif@univ-batna2.dz, Pezzimenti, F.2 (AUTHOR), Dehimi, L.3,4 (AUTHOR), Della Corte, F. G.2 (AUTHOR)
Source: Applied Physics A: Materials Science & Processing. Nov2020, Vol. 126 Issue 11, p1-5. 5p.
Database: Academic Search Ultimate
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  Data: Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+A%3A+Materials+Science+%26+Processing%22">Applied Physics A: Materials Science & Processing</searchLink>. Nov2020, Vol. 126 Issue 11, p1-5. 5p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=147535451
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        Value: 10.1007/s00339-020-03850-6
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        Text: English
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              Text: Nov2020
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              Value: 126
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