APA (7th ed.) Citation

Dashiell, M. W., Beausang, J. F., Nichols, G., Depoy, D. M., Danielson, L. R., Ehsani, H., . . . Taylor, G. (2004). 0.52 eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology. AIP Conference Proceedings, 738(1), 404. https://doi.org/10.1063/1.1841919

Chicago Style (17th ed.) Citation

Dashiell, M. W., et al. "0.52 EV Quaternary InGaAsSb Thermophotovoltaic Diode Technology." AIP Conference Proceedings 738, no. 1 (2004): 404. https://doi.org/10.1063/1.1841919.

MLA (9th ed.) Citation

Dashiell, M. W., et al. "0.52 EV Quaternary InGaAsSb Thermophotovoltaic Diode Technology." AIP Conference Proceedings, vol. 738, no. 1, 2004, p. 404, https://doi.org/10.1063/1.1841919.