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0.52 eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology.

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Title: 0.52 eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology.
Authors: Dashiell, M. W.1, Beausang, J. F.1, Nichols, G.1, Depoy, D. M.1, Danielson, L. R.1, Ehsani, H.1, Rahner, K. D.1, Azarkevich, J.1, Talamo, P.1, Brown, E.1, Burger, S.1, Fourspring, P.1, Topper, W.1, Baldasaro, P. F.1, Wang, C. A.2, Huang, R.2, Connors, M.2, Turner, G.2, Shellenbarger, Z.3, Taylor, G.3
Source: AIP Conference Proceedings. 2004, Vol. 738 Issue 1, p404-414. 11p.
Database: Academic Search Ultimate
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