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Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress.

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Bibliographic Details
Title:	Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress.
Authors:	Narita, Tetsuo¹ (AUTHOR) tetsuo-narita@mosk.tytlabs.co.jp, Kanechika, Masakazu² (AUTHOR), Kojima, Jun² (AUTHOR), Watanabe, Hiroki³ (AUTHOR), Kondo, Takeshi² (AUTHOR), Uesugi, Tsutomu² (AUTHOR), Yamaguchi, Satoshi¹ (AUTHOR), Kimoto, Yasuji¹ (AUTHOR), Tomita, Kazuyoshi² (AUTHOR), Nagasato, Yoshitaka³ (AUTHOR), Ikeda, Satoshi³ (AUTHOR), Kosaki, Masayoshi⁴ (AUTHOR), Oka, Tohru⁴ (AUTHOR), Suda, Jun^2,5 (AUTHOR)
Source:	Scientific Reports. 1/27/2022, Vol. 12 Issue 1, p1-7. 7p.
Database:	Academic Search Ultimate
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