APA (7th ed.) Citation

Folomeshkin, M. S., Volkovsky, Y. A., Prosekov, P. A., Galiev, G. B., Klimov, E. A., Klochkov, A. N., . . . Kovalchuk, M. V. (2022). X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer. Crystallography Reports, 67(3), 317. https://doi.org/10.1134/S1063774522030075

Chicago Style (17th ed.) Citation

Folomeshkin, M. S., et al. "X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer." Crystallography Reports 67, no. 3 (2022): 317. https://doi.org/10.1134/S1063774522030075.

MLA (9th ed.) Citation

Folomeshkin, M. S., et al. "X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer." Crystallography Reports, vol. 67, no. 3, 2022, p. 317, https://doi.org/10.1134/S1063774522030075.