SiC‐based analytical model for gate‐stack dual metal nanowire FET with enhanced analog performance.

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Bibliographic Details
Title: SiC‐based analytical model for gate‐stack dual metal nanowire FET with enhanced analog performance.
Authors: Neeraj1 (AUTHOR), Goel, Anubha2 (AUTHOR), Sharma, Shobha1 (AUTHOR), Rewari, Sonam3 (AUTHOR) rewarisonam@gmail.com, Gupta, Radhey Shyam2 (AUTHOR)
Source: International Journal of Numerical Modelling. Jul2022, Vol. 35 Issue 4, p1-15. 15p.
Database: Academic Search Ultimate
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ISSN:08943370
DOI:10.1002/jnm.2986