APA (7th ed.) Citation

Bessolov, V. N., Konenkova, E. V., Seredova, N. V., Panteleev, V. N., & Scheglov, M. E. (2022). Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy. Semiconductors, 56(3), 164. https://doi.org/10.1134/S106378262202004X

Chicago Style (17th ed.) Citation

Bessolov, V. N., E. V. Konenkova, N. V. Seredova, V. N. Panteleev, and M. E. Scheglov. "Anisotropic Stresses in GaN(11‒20) Layers on an R-Al2O3 Substrate During Hydride Vapor Phase Epitaxy." Semiconductors 56, no. 3 (2022): 164. https://doi.org/10.1134/S106378262202004X.

MLA (9th ed.) Citation

Bessolov, V. N., et al. "Anisotropic Stresses in GaN(11‒20) Layers on an R-Al2O3 Substrate During Hydride Vapor Phase Epitaxy." Semiconductors, vol. 56, no. 3, 2022, p. 164, https://doi.org/10.1134/S106378262202004X.