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Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy.

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Title: Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy.
Authors: Bessolov, V. N.1 (AUTHOR), Konenkova, E. V.1 (AUTHOR) lena@triat.ioffe.ru, Seredova, N. V.1 (AUTHOR), Panteleev, V. N.1 (AUTHOR), Scheglov, M. E.1 (AUTHOR)
Source: Semiconductors. Mar2022, Vol. 56 Issue 3, p164-168. 5p.
Database: Academic Search Ultimate
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Header DbId: asn
DbLabel: Academic Search Ultimate
An: 157504975
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Anisotropic Stresses in GaN(11‒20) Layers on an r-Al<subscript>2</subscript>O<subscript>3</subscript> Substrate during Hydride Vapor Phase Epitaxy.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Bessolov%2C+V%2E+N%2E%22">Bessolov, V. N.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Konenkova%2C+E%2E+V%2E%22">Konenkova, E. V.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> lena@triat.ioffe.ru</i><br /><searchLink fieldCode="AR" term="%22Seredova%2C+N%2E+V%2E%22">Seredova, N. V.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Panteleev%2C+V%2E+N%2E%22">Panteleev, V. N.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Scheglov%2C+M%2E+E%2E%22">Scheglov, M. E.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Mar2022, Vol. 56 Issue 3, p164-168. 5p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=157504975
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1134/S106378262202004X
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 164
    Titles:
      – TitleFull: Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Bessolov, V. N.
      – PersonEntity:
          Name:
            NameFull: Konenkova, E. V.
      – PersonEntity:
          Name:
            NameFull: Seredova, N. V.
      – PersonEntity:
          Name:
            NameFull: Panteleev, V. N.
      – PersonEntity:
          Name:
            NameFull: Scheglov, M. E.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 03
              Text: Mar2022
              Type: published
              Y: 2022
          Identifiers:
            – Type: issn-print
              Value: 10637826
          Numbering:
            – Type: volume
              Value: 56
            – Type: issue
              Value: 3
          Titles:
            – TitleFull: Semiconductors
              Type: main
ResultId 1