Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy.
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| Title: | Anisotropic Stresses in GaN(11‒20) Layers on an r-Al |
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| Authors: | Bessolov, V. N.1 (AUTHOR), Konenkova, E. V.1 (AUTHOR) lena@triat.ioffe.ru, Seredova, N. V.1 (AUTHOR), Panteleev, V. N.1 (AUTHOR), Scheglov, M. E.1 (AUTHOR) |
| Source: | Semiconductors. Mar2022, Vol. 56 Issue 3, p164-168. 5p. |
| Database: | Academic Search Ultimate |
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| ISSN: | 10637826 |
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| DOI: | 10.1134/S106378262202004X |
