APA (7th ed.) Citation

Tyschenko, I., Khmelnitsky, R., Saraykin, V., Volodin, V., & Popov, V. (2022). Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase. Semiconductors, 56(3), 215. https://doi.org/10.1134/S1063782622020154

Chicago Style (17th ed.) Citation

Tyschenko, I. E, R. A Khmelnitsky, V. V Saraykin, V. A Volodin, and V. P Popov. "Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase." Semiconductors 56, no. 3 (2022): 215. https://doi.org/10.1134/S1063782622020154.

MLA (9th ed.) Citation

Tyschenko, I. E, et al. "Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase." Semiconductors, vol. 56, no. 3, 2022, p. 215, https://doi.org/10.1134/S1063782622020154.