Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase.

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Bibliographic Details
Title: Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase.
Authors: Tyschenko, I. E.1 (AUTHOR) tys@isp.nsc.ru, Khmelnitsky, R. A.2,3 (AUTHOR), Saraykin, V. V.4,5 (AUTHOR), Volodin, V. A.1,6 (AUTHOR), Popov, V. P.1 (AUTHOR)
Source: Semiconductors. Mar2022, Vol. 56 Issue 3, p215-222. 8p.
Database: Academic Search Ultimate
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ISSN:10637826
DOI:10.1134/S1063782622020154