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On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon.

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Title: On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon.
Authors: Seredin, P. V.1,2 (AUTHOR) paul@phys.vsu.ru, Radam, Ali Obaid1 (AUTHOR), Goloshchapov, D. L.1 (AUTHOR), Len'shin, A. S.1,3 (AUTHOR), Buylov, N. S.1 (AUTHOR), Barkov, K. A.1 (AUTHOR), Nesterov, D. N.1 (AUTHOR), Mizerov, A. M.4 (AUTHOR), Timoshnev, S. N.4 (AUTHOR), Nikitina, E. V.4 (AUTHOR), Arsentyev, I. N.5 (AUTHOR), Sharafidinov, Sh.5 (AUTHOR), Kukushkin, S. A.6 (AUTHOR), Kasatkin, I. A.7 (AUTHOR)
Source: Semiconductors. Apr2022, Vol. 56 Issue 4, p253-258. 6p.
Database: Academic Search Ultimate
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  Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Apr2022, Vol. 56 Issue 4, p253-258. 6p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=157987086
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              Text: Apr2022
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