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A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching.

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Title: A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching.
Authors: Zhu, Shengnan1 (AUTHOR) zhu.2670@osu.edu, Liu, Tianshi1 (AUTHOR), Fan, Junchong1 (AUTHOR), Salemi, Arash2 (AUTHOR), White, Marvin H.1 (AUTHOR), Sheridan, David2 (AUTHOR), Agarwal, Anant K.1 (AUTHOR)
Source: Materials (1996-1944). Oct2022, Vol. 15 Issue 19, p6690. 6p.
Database: Academic Search Ultimate
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  Data: A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching.
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  Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Oct2022, Vol. 15 Issue 19, p6690. 6p.
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        Value: 10.3390/ma15196690
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      – Code: eng
        Text: English
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        StartPage: 6690
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      – TitleFull: A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching.
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            NameFull: Zhu, Shengnan
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            NameFull: Liu, Tianshi
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            – D: 01
              M: 10
              Text: Oct2022
              Type: published
              Y: 2022
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              Value: 15
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              Value: 19
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            – TitleFull: Materials (1996-1944)
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