APA (7th ed.) Citation

Weng, Y., Hsiao, M., Lin, C., Lan, Y., & Chang, E. (2023). Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate. Materials (1996-1944), 16(9), 3376. https://doi.org/10.3390/ma16093376

Chicago Style (17th ed.) Citation

Weng, You-Chen, Ming-Yao Hsiao, Chun-Hsiung Lin, Yu-Pin Lan, and Edward-Yi Chang. "Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate." Materials (1996-1944) 16, no. 9 (2023): 3376. https://doi.org/10.3390/ma16093376.

MLA (9th ed.) Citation

Weng, You-Chen, et al. "Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate." Materials (1996-1944), vol. 16, no. 9, 2023, p. 3376, https://doi.org/10.3390/ma16093376.