Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate.
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| Title: | Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate. |
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| Authors: | Weng, You-Chen1 (AUTHOR) ycweng.c@nycu.edu.tw, Hsiao, Ming-Yao1 (AUTHOR) teaandtea38@gmail.com, Lin, Chun-Hsiung2,3 (AUTHOR) chun_lin@nycu.edu.tw, Lan, Yu-Pin1 (AUTHOR) yplan@nycu.edu.tw, Chang, Edward-Yi2,3 (AUTHOR) edc@nycu.edu.tw |
| Source: | Materials (1996-1944). May2023, Vol. 16 Issue 9, p3376. 10p. |
| Database: | Academic Search Ultimate |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: asn DbLabel: Academic Search Ultimate An: 163687131 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Weng%2C+You-Chen%22">Weng, You-Chen</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> ycweng.c@nycu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Hsiao%2C+Ming-Yao%22">Hsiao, Ming-Yao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> teaandtea38@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Lin%2C+Chun-Hsiung%22">Lin, Chun-Hsiung</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<i> chun_lin@nycu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Lan%2C+Yu-Pin%22">Lan, Yu-Pin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> yplan@nycu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Chang%2C+Edward-Yi%22">Chang, Edward-Yi</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<i> edc@nycu.edu.tw</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. May2023, Vol. 16 Issue 9, p3376. 10p. |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=163687131 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/ma16093376 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 10 StartPage: 3376 Titles: – TitleFull: Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Weng, You-Chen – PersonEntity: Name: NameFull: Hsiao, Ming-Yao – PersonEntity: Name: NameFull: Lin, Chun-Hsiung – PersonEntity: Name: NameFull: Lan, Yu-Pin – PersonEntity: Name: NameFull: Chang, Edward-Yi IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 19961944 Numbering: – Type: volume Value: 16 – Type: issue Value: 9 Titles: – TitleFull: Materials (1996-1944) Type: main |
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