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Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate.

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Title: Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate.
Authors: Weng, You-Chen1 (AUTHOR) ycweng.c@nycu.edu.tw, Hsiao, Ming-Yao1 (AUTHOR) teaandtea38@gmail.com, Lin, Chun-Hsiung2,3 (AUTHOR) chun_lin@nycu.edu.tw, Lan, Yu-Pin1 (AUTHOR) yplan@nycu.edu.tw, Chang, Edward-Yi2,3 (AUTHOR) edc@nycu.edu.tw
Source: Materials (1996-1944). May2023, Vol. 16 Issue 9, p3376. 10p.
Database: Academic Search Ultimate
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ISSN:19961944
DOI:10.3390/ma16093376