APA (7th ed.) Citation

Kim, J., & Baek, D. (2023). A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology. Sensors (14248220), 23(15), 6827. https://doi.org/10.3390/s23156827

Chicago Style (17th ed.) Citation

Kim, Jeong-Geun, and Donghyun Baek. "A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology." Sensors (14248220) 23, no. 15 (2023): 6827. https://doi.org/10.3390/s23156827.

MLA (9th ed.) Citation

Kim, Jeong-Geun, and Donghyun Baek. "A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology." Sensors (14248220), vol. 23, no. 15, 2023, p. 6827, https://doi.org/10.3390/s23156827.