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A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology.

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Title: A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology.
Authors: Kim, Jeong-Geun1 (AUTHOR) junggun@kw.ac.kr, Baek, Donghyun2 (AUTHOR) dhbaek@cau.ac.kr
Source: Sensors (14248220). Aug2023, Vol. 23 Issue 15, p6827. 8p.
Database: Academic Search Ultimate
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  Data: A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology.
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  Data: <searchLink fieldCode="AR" term="%22Kim%2C+Jeong-Geun%22">Kim, Jeong-Geun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> junggun@kw.ac.kr</i><br /><searchLink fieldCode="AR" term="%22Baek%2C+Donghyun%22">Baek, Donghyun</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> dhbaek@cau.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Sensors+%2814248220%29%22">Sensors (14248220)</searchLink>. Aug2023, Vol. 23 Issue 15, p6827. 8p.
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        Value: 10.3390/s23156827
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