APA (7th ed.) Citation

Wang, L., & Chu, S. (2023). Effects of Post-Annealing on the Properties of ZnO: Ga Films with High Transparency (94%) and Low Sheet Resistance (29 Ω/square). Materials (1996-1944), 16(19), 6463. https://doi.org/10.3390/ma16196463

Chicago Style (17th ed.) Citation

Wang, Li-Wen, and Sheng-Yuan Chu. "Effects of Post-Annealing on the Properties of ZnO: Ga Films with High Transparency (94%) and Low Sheet Resistance (29 Ω/square)." Materials (1996-1944) 16, no. 19 (2023): 6463. https://doi.org/10.3390/ma16196463.

MLA (9th ed.) Citation

Wang, Li-Wen, and Sheng-Yuan Chu. "Effects of Post-Annealing on the Properties of ZnO: Ga Films with High Transparency (94%) and Low Sheet Resistance (29 Ω/square)." Materials (1996-1944), vol. 16, no. 19, 2023, p. 6463, https://doi.org/10.3390/ma16196463.