APA (7th ed.) Citation

Babichev, A. V., Pirogov, E. V., Sobolev, M. S., Denisov, D. V., Fominykh, H. A., Baranov, A. I., . . . Egorov, A. Y. (2023). Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice. Semiconductors, 57(11), 474. https://doi.org/10.1134/S106378262308002X

Chicago Style (17th ed.) Citation

Babichev, A. V., et al. "Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice." Semiconductors 57, no. 11 (2023): 474. https://doi.org/10.1134/S106378262308002X.

MLA (9th ed.) Citation

Babichev, A. V., et al. "Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice." Semiconductors, vol. 57, no. 11, 2023, p. 474, https://doi.org/10.1134/S106378262308002X.