APA (7th ed.) Citation

Kryzhanovskaya, N. V., Blokhin, S. A., Makhov, I. S., Moiseev, E. I., Nadtochiy, A. M., Fominykh, N. A., . . . Zhukov, A. E. (2023). Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots. Semiconductors, 57(13), 594. https://doi.org/10.1134/S1063782623050093

Chicago Style (17th ed.) Citation

Kryzhanovskaya, N. V., et al. "Investigation of a P–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots." Semiconductors 57, no. 13 (2023): 594. https://doi.org/10.1134/S1063782623050093.

MLA (9th ed.) Citation

Kryzhanovskaya, N. V., et al. "Investigation of a P–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots." Semiconductors, vol. 57, no. 13, 2023, p. 594, https://doi.org/10.1134/S1063782623050093.