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Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots.

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Title: Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots.
Authors: Kryzhanovskaya, N. V.1 (AUTHOR) nataliakryzh@gmail.com, Blokhin, S. A.1,2 (AUTHOR), Makhov, I. S.1 (AUTHOR), Moiseev, E. I.1 (AUTHOR), Nadtochiy, A. M.1 (AUTHOR), Fominykh, N. A.1 (AUTHOR), Mintairov, S. A.2 (AUTHOR), Kaluyzhnyy, N. A.2 (AUTHOR), Guseva, Yu. A.2 (AUTHOR), Kulagina, M. M.2 (AUTHOR), Zubov, F. I.1,3 (AUTHOR), Kolodeznyi, E. S.4 (AUTHOR), Maximov, M. V.1,3 (AUTHOR), Zhukov, A. E.1 (AUTHOR)
Source: Semiconductors. Dec2023, Vol. 57 Issue 13, p594-598. 5p.
Database: Academic Search Ultimate
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ISSN:10637826
DOI:10.1134/S1063782623050093